Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...

This new module is the first to incorporate a power semiconductor comprised of just an SiC MOSFET, increasing the rated current to 180A for broader applicability while contributing to lower power ...

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Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

With PC ODMs and OEMs bracing for a particularly slow second half of 2022, related power diode and MOSFET suppliers have moved to vie for more orders from the power supply system sector where demand ...

First High-Voltage MOSFET Product from the Platform Meets Demands for High Efficiency, Power Density, and Robust Performance in Next‑Gen Power and Solar Inverter Applications Alpha and Omega ...